View PC81410NSZ_102767.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PC8141XNSZ Series
PC8141X NSZ Series
s Features
1. Low input current type (IF=0.5mA) 2. High resistance to noise due to high common rejection voltage (CMR:MIN. 10kV/s) 3. AC input type 4. Compact dual-in line package 5. Isolation voltage (Viso:5kVrms) 6. Recognized by UL, file No. E64380
AC Input, Low Input Current Type Photocoupler
s Outline Dimensions
Anode mark 1.20.3 0.60.2
(Unit : mm)
1
4
8141
2 3
6.5
0.5
s Applications
1. Programmable controllers 2. Facsimiles 3. Telephones
7.620.3
2.540.25
4.580.5
4.580.5 0.5TYP. 3.50.5 2.70.5
s Rank Table
Model No. Rank mark PC81410NSZ A or no mark A PC81411NSZ Ic (mA) 0.25 to 2.0 0.5 to 1.5 Conditions
IF=0.5mA VCE=5V Ta=25C
Epoxy resin 0.260.1 : 0 to 13
0.50.1
s Absolute Maximum Ratings
(Ta=25C) Unit mA mA mW V V mA mW mW C C kVrms C
1
Internal connection diagram
4 1 2 3 2 3 4
Parameter Symbol Rating IF 10 Forward current Input *1 Peak forward current IFM 200 Power dissipation P 15 Collector-emitter voltage VCEO 70 Emitter-collector voltage VECO 6 Output IC 50 Collector current PC 150 Collector power dissipation 170 Total power dissipation Ptot Operating temperature -30 to +100 Topr -55 to +125 Tstg Storage temperature *2 Viso Isolation voltage 5 *3 260 Soldering temperature Tsol
*1 Pulse width<=100s, Duty ratio=0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s
Anode (Cathode) Cathode (Anode) Emitter Collector
Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
3.00.5
PC8141XNSZ Series s Electro-optical Characteristics
Parameter Symbol Forward voltage VF Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO IC Collector current Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time tf Fall time
*1
(Ta=25C) Conditions IF=10mA V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10A, IF=0 IF=0.5mA, VCE=5V IF=10mA, IC=1mA DC500V 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100 MIN. - - - 70 6 0.25 - 5x1010 - - - 10 TYP. 1.2 30 - - - - - 1x1011 0.6 4 3 - MAX. 1.4 250 100 - - 2.0 0.2 - 1.0 18 18 - Unit V pF nA V V mA V pF s s kV/s
Transfer characteristics
Output
Input
Common mode rejection voltage
CMR
Ta=25C, RL=470, VCM=1.5kV (peak), IF=0mA, VCC=9V, Vnp=100mV
*1 Refer to Fig.1.
Fig.1 Test Circuit for Common Mode Rejection Voltage
(dV/dt)
VCM RL Vnp VCC 1) Vcp Vnp
VCM
VCM : High wave VO pulse (Vcp Nearly = dV/dtxCfxRL) RL=470 1) Vcp : Voltage which is generated by displacement current in floating VCC=9V capacitance between primary and secondary side.
Fig.2 Forward Current vs. Ambient Temperature
Fig.3 Diode Power Dissipation vs. Ambient Temperature
10
Diode power dissipation P (mW)
15
Forward current IF (mA)
10
5
5
0 -30
0
25
50
75
100
125
0 -30
0
25
50
75
100
125
Ambient temperature Ta (C)
Ambient temperature Ta (C)
PC8141XNSZ Series Fig.4 Collector Power Dissipation vs. Ambient Temperature
Collector power dissipation PC (mW)
Fig.5 Total Power Dissipation vs. Ambient Temperature
Total power dissipation Ptot (mW)
200
200 170 150
150
100
100
50
50
0 -30
0
25
50
75
100
125
0 -30
0
25
50
75
100
125
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig.6 Peak Forward Current vs. Duty Ratio
2000 Peak forward current IFM (mA) 1000 500 Pulse width <=100s Ta=25C
Fig.7 Forward Current vs. Forward Voltage
100
Forward current IF (mA)
10 Ta=25C Ta=100C 1 Ta=75C Ta=50C Ta=0C Ta=-25C
200 100 50
20 10
5 10
-3
2
5 10
-2
2
5 10
-1
0.1
2 5
1
0
0.5
1.0
1.5
2.0
Duty ratio
Forward voltage VF (V)
Fig.8 Current Transfer Ratio vs. Forward Current
500 VCE=5V Ta=25C Current transfer ratio CTR (%) 400
Fig.9 Collector Current vs. Collector-emitter Voltage
40 Ta=25C PC (MAX.) Collector current IC (mA) 30 IF=7mA 20 IF=5mA IF=3mA 10 IF=2mA IF=1mA IF=0.5mA 8 10
300
200
100
0 0.1
0 1 Forward current IF (mA) 10 0 2 4 6 Collector-emitter voltage VCE (V)
PC8141XNSZ Series Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature
150 VCE=5V IF=0.5mA 100
Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature
Collector-emitter saturation voltage VCE (sat) (V) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) IF=10mA IC=1mA
Relative current transfer ratio (%)
50
0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C)
Fig.12 Collector Dark Current vs. Ambient Temperature
10-5 10-6 10-7 10-8 10-9 10-10 10-11 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) VCE=50V
Fig.13 Response Time vs. Load Resistance
1000 VCE=2V IC=2mA Ta=25C 100 Response time (s) tf td
Collector dark current ICEO (A)
10 tr 1 ts
0.1 0.1
1 Load resistance RL (k)
10
Fig.14 Response Time vs. Load Resistance (Saturation)
1000 VCC=5V IF=16mA Ta=25C 100 Response time (s) ts 10 tf
Fig.15 Test Circuit for Response Time
VCC RD Input RL Output Input Output 10% 90%
td tr td
ts tf
1
tr 0.1 1 10 Load resistance RL (k) 100
PC8141XNSZ Series Fig.16 Voltage Gain vs Frequency
5 Collector-emitter saturation voltage VCE (sat) (V) VCE=2V IC=2mA Ta=25C
Fig.17 Collector-emitter Saturation Voltage vs. Forward Current
5 IC=7mA 4 IC=5mA IC=3mA IC=2mA 3 IC=1mA IC=0.5mA 2 Ta=25C
0 Voltage gain AV (dB) -5 -10 RL=10k
1k 100 -15 -20 -25 0.1
1
0 0 2 4 6 8 10 Forward current IF (mA)
1
10 Frequency f (kHz)
100
1000
Fig.18 Reflow Soldering
Only one time soldering is recommended within the temperature profile shown below. 230C
200C
180C
25C 10s 30s 2min 1min 1min

▲Up To Search▲

Price & Availability of PC81410NSZ

	To Download PC81410NSZ Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .